Ultrathin metal layer boosts spin-related signals, opening a door to ultralow-power electronics

Researchers at Kyushu University found that a 0.3 nm ultrathin iridium manganese layer can boost spin Seebeck effect and spin Hall magnetoresistance signals in YIG/Pt spintronic structures. The work suggests that controlling atomic-scale interface layers can improve spin transfer for ultralow-power electronics and heat-to-electricity devices.